cystech electronics corp. spec. no. : c809t3 issued date : 2008.08.01 revised date: page:1/5 BTB772ST3 cystek product specification low vcesat pnp epitaxial planar transistor BTB772ST3 features ? low v ce (sat), typically -0.45 v at i c / i b = -2a / -0.2a ? excellent current gain characteristics ? pb-free package symbol outline BTB772ST3 to-126 e c b b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limit unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v i c (dc) -2 a collector current i c (pulse) -5 *1 a pd(ta=25 ) 1 power dissipation pd(tc=25 ) 10 w junction temperature tj 150 c storage temperature tstg -55~+150 c note : *1. single pulse pw 3 Q 00 s, duty 2% Q .
cystech electronics corp. spec. no. : c809t3 issued date : 2008.08.01 revised date: page:2/5 BTB772ST3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -40 - - v i c =-50 a, i e =0 bv ceo -30 - - v i c =-1ma, i b =0 bv ebo -5 - - v i e =-50 a, i c =0 i cbo - - -1 a v cb =-30v, i e =0 i ebo - - -1 a v eb =-5v, i c =0 *v ce(sat) - -0.45 -0.6 v i c =-2a, i b =-0.2a *v be(sat) - -1 -1.5 v i c =-2a, i b =-0.2a *h fe 1 120 - - - v ce =-2v, i c =-20ma *h fe 2 180 - 390 - v ce =-2v, i c =-500ma f t - 80 - mhz v ce =-5v, i e =-0.1a, f=100mhz cob - 55 - pf v cb =-10v, f=1mhz *pulse test : pulse width 380 s, duty cycle 2% classification of h fe 2 rank p range 180~390 ordering information device package shipping marking BTB772ST3 to-126 (pb-free) 200 pcs / bag, 15 bags/box, 10 boxes/carton b772 recommended storage condition: temperature : 10~ 35 c humidity : 30~ 60% rh
cystech electronics corp. spec. no. : c809t3 issued date : 2008.08.01 revised date: page:3/5 BTB772ST3 cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=50ib vcesat=10ib vcesat=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 2 4 6 8 10 12 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c809t3 issued date : 2008.08.01 revised date: page:4/5 BTB772ST3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c809t3 issued date : 2008.08.01 revised date: page:5/5 BTB772ST3 cystek product specification to-126 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. a b c f d e h 1 2 3 k j i 3 4 l m 1 2 g marking: b772 p device name hfe rank dim min. max. min. max. 1 - *3 - *3 f 0.0280 0.0319 0.71 0.81 2 - *3 - *3 g 0.0480 0.0520 1.22 1.32 3 - *3 - *3 h 0.1709 0.1890 4.34 4.80 4 - *3 - *3 i 0.0950 0.1050 2.41 2.66 a 0.1500 0.1539 3.81 3.91 j 0.0450 0.0550 1.14 1.39 b 0.2752 0.2791 6.99 7.09 k 0.0450 0.0550 1.14 1.39 c 0.5315 0.6102 13.50 15.50 l - *0.0217 - *0.55 d 0.2854 0.3039 7.52 7.72 m 0.1378 0.1520 3.50 3.86 e 0.0374 0.0413 0.95 1.05 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: kfc; tin plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1.emitter 2.base 3.collector 3-lead to-126 plastic package cystek packa g e code: t3 date code
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